Ellipsometric Measurements Of Thin Residual Films On Thermally Oxidized Silicon

Samuel S. So; S. M. Zimmerman

doi:10.1117/12.955023

22 October 1976 Ellipsometric Measurements Of Thin Residual Films On Thermally Oxidized Silicon

Samuel S. So, S. M. Zimmerman

Proceedings Volume 0088, Polarized Light: Instruments, Devices, Applications; (1976) https://doi.org/10.1117/12.955023
Event: 20th Annual Technical Symposium, 1976, San Diego, United States

Abstract

Photoresist has been extensively used in the semiconductor industry for the masking and etching operation of integrated circuit fabrication. Photoresist cleanliness is a major factor influencing the overall quality of the photolithographic process. Because of its high sensitivity and the non-destructive nature of optical measurements, ellipsometry has been used in the present study to characterize thin residual films on thermally oxidized silicon. The optical constants of silicon and refractive index and thickness of the oxide film have been determined ellipsometrically at λ6328Å. Thin residual films of less than 50Å resulted as determined by the difference in the measurements before and after a given photolithographic process. Sample results are presented to show that ellipsometry is an extremely sensitive and effective tool of monitoring the cleanliness of photoresist treated surface after photolithographic process. Because of the limited precision and accuracy of our present ellipsometer, the optical constants of such a very thin residual film cannot be determined precisely.

Citation Download Citation

Samuel S. So and S. M. Zimmerman "Ellipsometric Measurements Of Thin Residual Films On Thermally Oxidized Silicon", Proc. SPIE 0088, Polarized Light: Instruments, Devices, Applications, (22 October 1976); https://doi.org/10.1117/12.955023

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