The analysis of filling pulse parameters influence on ICTS data of GaAs MIS structures

Ł. Drewniak; S. Kochowski; K. Nitsch; R. Paszkiewicz; B. Paszkiewicz

doi:10.1117/12.2030108

25 July 2013 The analysis of filling pulse parameters influence on ICTS data of GaAs MIS structures

Ł. Drewniak, S. Kochowski, K. Nitsch, R. Paszkiewicz, B. Paszkiewicz

Proceedings Volume 8902, Electron Technology Conference 2013; 890209 (2013) https://doi.org/10.1117/12.2030108
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

The results of analysis of filling pulse parameters influence on the ICTS spectra recorded for Au/Pd/Ti-SiO₂ – (n) GaAs MIS structures have been presented. It was demonstrated that the amplitude and the width of filling pulse strongly affects: the shape, the amplitude and the position of ICTS peaks. Furthermore it was found that the pulse amplitude of 1 V, in the case of investigated structures, corresponds to a small pulse and the width of filling pulse is not connected in simple way with the pulse amplitude as follows from literature. It was shown that both the measurements at short and long time of filling pulse reveal a complex structure of ICTS spectrum. It was also demonstrated that different time constants of interface states are obtained when the measurements are not performed with a small pulse and when the filling pulse time is not long enough to achieve a complete states filling.

Citation Download Citation

Ł. Drewniak, S. Kochowski, K. Nitsch, R. Paszkiewicz, and B. Paszkiewicz "The analysis of filling pulse parameters influence on ICTS data of GaAs MIS structures", Proc. SPIE 8902, Electron Technology Conference 2013, 890209 (25 July 2013); https://doi.org/10.1117/12.2030108

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