Paper
21 August 2013 Design of prototype high speed CMOS image sensors
Zhong-xiang Cao, Yang-fan Zhou, Quan-liang Li, Qi Qin, Nan-jian Wu
Author Affiliations +
Proceedings Volume 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications; 89082G (2013) https://doi.org/10.1117/12.2034961
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
Large size photodiode used in high speed CMOS image sensor pixel suffers from slow signal charges transfer speed and large image lag. To solve these problems, in this paper, we present a new device structure for high speed CMOS image sensor pixel with lateral graded-doping profile pinned photodiode and non-uniform doped channel transfer gate. Theory analysis and TCAD simulation results indicate that the proposed pixel can increase the signal charges transfer speed and reduce the image lag effectively. The measurement results show that, the proposed pixel is able to achieve 40ns readout time and 0.44% image lag. Compare to conventional pixels, 64 times higher readout speed enhancement and five times lower image lag were achieved.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhong-xiang Cao, Yang-fan Zhou, Quan-liang Li, Qi Qin, and Nan-jian Wu "Design of prototype high speed CMOS image sensors", Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89082G (21 August 2013); https://doi.org/10.1117/12.2034961
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photodiodes

Image sensors

CMOS sensors

Image enhancement

Ion implantation

Prototyping

Switches

Back to Top