High Power Semiconductor Laser Amplifiers

Richard R Craig; Ronald R Stephans

doi:10.1117/12.944347

9 August 1988 High Power Semiconductor Laser Amplifiers

Richard R Craig, Ronald R Stephans

Proceedings Volume 0893, High Power Laser Diodes and Applications; (1988) https://doi.org/10.1117/12.944347
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

A simple model of semiconductor diode optical amplifiers is developed and applied to broad-area structures. Small signal gains as high as 20dB are shown to be feasible. Effects of physically tapering the amplifier to saturate the gain more efficiently are examined. A potential 10% increase in extraction efficiency is shown. Practical limits on the amplifier gain are discussed.

Citation Download Citation

Richard R Craig and Ronald R Stephans "High Power Semiconductor Laser Amplifiers", Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); https://doi.org/10.1117/12.944347

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