AlAs/InAlAs-InGaAs QCLs grown by gas-source molecular-beam epitaxy

W. T. Masselink; M. P. Semtsiv; Y. V. Flores; Sergii Kurlov; M. Elagin; G. Monastyrskyi; J.-F. Kischkat; A. Aleksandrova

doi:10.1117/12.2036359

27 February 2014 AlAs/InAlAs-InGaAs QCLs grown by gas-source molecular-beam epitaxy

W. T. Masselink, M. P. Semtsiv, Y. V. Flores, Sergii Kurlov, M. Elagin, G. Monastyrskyi, J.-F. Kischkat, A. Aleksandrova

Author Affiliations +

Proceedings Volume 9002, Novel In-Plane Semiconductor Lasers XIII; 90021A (2014) https://doi.org/10.1117/12.2036359
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Active region designs of QCLs containing composite barriers based on AlAs allow short wavelength emission, improved injection efficiency, and high values of T₀ and T₁. On the other hand, AlAs introduces challenges, not only in strain compensation and growth, but also in effects on thermal management, thermal stability, and scattering. Leakage current, allowing electrons to bypass transitions between upper and lower laser levels occur due to scattering of electrons into higher-lying states via phonons and interface roughness scattering. This interface roughness scattering is exacerbated by large values of ΔE_c and by the rms roughness itself, both of which are pronounced at the AlAs/InGaAs interface. The resulting leakage current noticeably reduces the slope efficiency, leading to more heating to achieve a given emission power. Efficient thermal management requires a buried heterostructure design; the re-growth of InP:Fe, however, needs to be carried out at temperatures consistent with maintaining the highly strained AlAs/InGaAs interfaces. This paper describes the physics of intersubband electron scattering due to strained interfaces and some partially optimized structures with J_th = 1.7 kA/cm² at 300 K, slope efficiency η = 1.4 W/A, T₀ = 175 K, and T₁ = 550 K. Re-growth of InP:Fe using gas-source MBE at substrate temperatures below 550°C results in packaged lasers with 7 μm width having high thermal conductance.

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W. T. Masselink, M. P. Semtsiv, Y. V. Flores, Sergii Kurlov, M. Elagin, G. Monastyrskyi, J.-F. Kischkat, and A. Aleksandrova "AlAs/InAlAs-InGaAs QCLs grown by gas-source molecular-beam epitaxy", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021A (27 February 2014); https://doi.org/10.1117/12.2036359

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