Designing extreme-ultraviolet lithographic objective for 11 nm node

Zhen Cao; Yanqiu Li; Fei Liu

doi:10.1117/12.2046218

17 April 2014 Designing extreme-ultraviolet lithographic objective for 11 nm node

Zhen Cao, Yanqiu Li, Fei Liu

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90482F (2014) https://doi.org/10.1117/12.2046218
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) lithography is one of the most promising technologies for 11 nm node. In this paper, a six-mirror objective system with a higher numerical aperture (NA) 0.5 and a central obscuration was designed with grouping design method. Some key issues about grouping design and control of obscuration were discussed in detail. Design result shows that the size of obscuration is smaller than 30% radius of the pupil and the composite Root-Mean-Square (RMS) wavefront error can reach 0.029 λ (λ=13.5 nm) in a 13 mm×1 mm ring field. Design of this six-mirror objective system provides a potential solution for 11 nm node of EUV lithography.

Citation Download Citation

Zhen Cao, Yanqiu Li, and Fei Liu "Designing extreme-ultraviolet lithographic objective for 11 nm node", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482F (17 April 2014); https://doi.org/10.1117/12.2046218

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