Solution to wafer edge silicon needle defect of deep trench process

Jun Guan; Lu Huang; Weimin Shi; Weiguang Yang; Juan Qin; Jin Liu; Huahui Kuang; Xiuchun Ming; Meilin Xu

doi:10.1117/12.2053219

16 December 2013 Solution to wafer edge silicon needle defect of deep trench process

Jun Guan, Lu Huang, Weimin Shi, Weiguang Yang, Juan Qin, Jin Liu, Huahui Kuang, Xiuchun Ming, Meilin Xu

Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681N (2013) https://doi.org/10.1117/12.2053219
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China

Abstract

In design and manufacturing of power MOS microelectronic device, deep trench process is used for some special request. The trench depth reaches to scores of micrometer. some are often used in deep trench etching step. Wafer edge generates silicon grass defect. It becomes the major source of particle during the post wet clean steps, which impact line yield and contaminate wet etching tools. The paper introduces two solutions for solving this defect by optimizing trench-photo process. One is inverted trapezoid process and the other is negative resist process. Both solutions in lithography are aimed at wafer edge protection. The deep trench etching step is to protect the underground material from being damaged, and results to solve the wafer edge silicon grass defect of deep trench process.

Citation Download Citation

Jun Guan, Lu Huang, Weimin Shi, Weiguang Yang, Juan Qin, Jin Liu, Huahui Kuang, Xiuchun Ming, and Meilin Xu "Solution to wafer edge silicon needle defect of deep trench process", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681N (16 December 2013); https://doi.org/10.1117/12.2053219

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