Lithographic, Photochemical And O[sub]2[/sub] RIE Properties Of Three Polysilane Copolymers

Gary N. Taylor; Molly Y. Hellman; Thomas M. Wolf; John M. Zeigler

doi:10.1117/12.968329

1 January 1988 Lithographic, Photochemical And O₂ RIE Properties Of Three Polysilane Copolymers

Gary N. Taylor, Molly Y. Hellman, Thomas M. Wolf, John M. Zeigler

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968329
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

Polysilanes are high Si-content polymers containing backbone Si-Si bonds. Their high Si content makes them very resistant to removal by 02 reactive ion etching (RIE) while their Si-Si bonding results in strong transitions in the mid- and deep-UV regions. Mid-UV photolysis causes chain scission, a process used by IBM workers in two lithographic applications: as imaging layers in organometallic bilevel, 02-RIE-developed resistsl and as contrast enhancement materials for imaging with positive photoresists.

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Gary N. Taylor, Molly Y. Hellman, Thomas M. Wolf, and John M. Zeigler "Lithographic, Photochemical And O₂ RIE Properties Of Three Polysilane Copolymers", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968329

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