Paper
1 January 1988 "Masking Effect" And "Internal CEL" New Design Concepts For A Positive Working Photoresist
Konoe Miura, Tameichi Ochiai, Yasuhiro Kameyama, Chie Kashi, Shigeo Uoya, Masayuki Nakajima, Akira Kawai, Shinji Kishimura
Author Affiliations +
Abstract
Two new concepts,"masking effect" and "internal CEL", are proposed to design a high resolution quinonediazide-novolak type photoresist. On the basis of these two design concepts, we optimized the composition of the resist, and succeeded in developing a high resolution resist, which is composed of m-cresol/p-cresol/xylenol/formaldehyde novolak resin and 2 ,3 ,4 , 4' -tetrahydroxybenzophenone 1 , 2 -naphtoquinonediaz ide-5 -sulfonate. This resist can resolve as small as 0.6 um lines & spaces with aspect ratio of 2.7 (NA.0.42) and has the gamma value of 2.0.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Konoe Miura, Tameichi Ochiai, Yasuhiro Kameyama, Chie Kashi, Shigeo Uoya, Masayuki Nakajima, Akira Kawai, and Shinji Kishimura ""Masking Effect" And "Internal CEL" New Design Concepts For A Positive Working Photoresist", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968311
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Cited by 3 scholarly publications.
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KEYWORDS
Photoresist materials

Image processing

Photoresist processing

Photoresist developing

Lithography

Photomasks

Polymers

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