Nanolithography With Poly(3-Butenyltrimethylsilane Sulfone)

Antoni S Gozdz; Paul S.D Lin

doi:10.1117/12.945646

14 June 1988 Nanolithography With Poly(3-Butenyltrimethylsilane Sulfone)

Antoni S Gozdz, Paul S.D Lin

Proceedings Volume 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII; (1988) https://doi.org/10.1117/12.945646
Event: Medical Imaging II, 1988, Newport Beach, CA, United States

Abstract

A two-layer resist process for the rapid direct-write e-beam microfabrication of nanometer-size structures is reported. The resist structure had a top layer of a sensitive positive organosilicon e-beam resist, poly(3-butenyltrimethylsilane sulfone) (PBTMSS), and a bottom layer having high chemical, thermal and mechanical stability, e.g., hard-baked Novolac, polyimide or diamond-like carbon (DLC). Periodic patterns with a pitch of >-60 nm have been obtained. Double-channel planar-buried-heterostructure distributed-feedback 1.3-μm lasers incorporating 2025-nm-pitch λ/4-shifted gratings fabricated using the reported process had excellent spectral and power characteristics.

Citation Download Citation

Antoni S Gozdz and Paul S.D Lin "Nanolithography With Poly(3-Butenyltrimethylsilane Sulfone)", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945646

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