External cavity laser using a InAs quantum dot gain chip and an arrayed-waveguide grating for T-band optical communications

Hideki Shibutani; Yasunori Tomomatsu; Yoshinori Sawado; Katsumi Yoshizawa; Hideaki Asakura; Nazirul Afham Idris; Hiroyuki Tsuda

doi:10.1117/12.2080652

27 February 2015 External cavity laser using a InAs quantum dot gain chip and an arrayed-waveguide grating for T-band optical communications

Hideki Shibutani, Yasunori Tomomatsu, Yoshinori Sawado, Katsumi Yoshizawa, Hideaki Asakura, Nazirul Afham Idris, Hiroyuki Tsuda

Author Affiliations +

Proceedings Volume 9365, Integrated Optics: Devices, Materials, and Technologies XIX; 93651I (2015) https://doi.org/10.1117/12.2080652
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Utilizing T-band (1000 nm to 1260 nm) for optical communications is promising for short reach, and large capacity networks, such as data centers or access networks. It is feasible to use this with low-cost coarse wavelength division multiplexing (WDM). However, a tunable wavelength light source is necessary for such applications. In this paper, we propose a new configuration for an external cavity laser, which uses a silica-based arrayed waveguide grating (AWG) for the wavelength selecting element. The external cavity laser consists of a gain chip with high reflection (HR) and anti-reflection (AR) coated facets, coupling lenses, an AWG with AR/HR coatings, and an output fiber. The AWG has 17 connection ports, which correspond to 17 wavelengths with a channel spacing of 1.67 nm. The width of the connection port waveguides was optimized to achieve high coupling efficiency. The AWG chip size is 15 mm x 30 mm. The active layer in the gain chip has InAs quantum dots. The spontaneous emission 3-dB bandwidth was 48 nm (1108 nm to 1156 nm) when a current of 150 mA was injected into the gain chip. The lasing wavelength of the external cavity laser was successfully tuned from 1129.9 nm to 1154.4 nm by selecting the connection ports of the AWG. The typical threshold current was about 130 mA.

Citation Download Citation

Hideki Shibutani, Yasunori Tomomatsu, Yoshinori Sawado, Katsumi Yoshizawa, Hideaki Asakura, Nazirul Afham Idris, and Hiroyuki Tsuda "External cavity laser using a InAs quantum dot gain chip and an arrayed-waveguide grating for T-band optical communications", Proc. SPIE 9365, Integrated Optics: Devices, Materials, and Technologies XIX, 93651I (27 February 2015); https://doi.org/10.1117/12.2080652

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Quantum dots

Waveguides

Optical communications

Photonic integrated circuits

Indium arsenide

Lenses

Silica

Show All Keywords

Keywords/Phrases

Search In:

Publication Years