Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

R. G. Useinov; G. I. Zebrev; V. V. Emelyanov; A. S. Vatuev

doi:10.1117/12.2180756

18 December 2014 Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

R. G. Useinov, G. I. Zebrev, V. V. Emelyanov, A. S. Vatuev

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94401B (2014) https://doi.org/10.1117/12.2180756
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

Destructive single event gate rupture (SEGR) occurring in the gate oxides of power MOSFETs under impact of heavy ions is studied and modeled. SEGR cross section of power MOSFET with 70 nm oxide thickness as function of gate voltage was measured for four types of heavy ions. A predictive formula for the SEGR cross section is derived and validated. This formula can be used as a predictive instrument for computation of survival probability in a given spectrum of heavy ions in space environments.

Citation Download Citation

R. G. Useinov, G. I. Zebrev, V. V. Emelyanov, and A. S. Vatuev "Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94401B (18 December 2014); https://doi.org/10.1117/12.2180756

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