Research of the relations between single layer SiNx optical thin film processing techniques and laser induced damage properties prepared by PECVD technology

Peng Li; Lingxia Hang; Linjun Li; Fabin Huang

doi:10.1117/12.2075790

19 February 2015 Research of the relations between monolayer SiN_x optical thin film processing techniques and laser-induced damage properties prepared by PECVD technology

Peng Li, Lingxia Hang, Linjun Li, Fabin Huang

Author Affiliations +

Proceedings Volume 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014); 944919 (2015) https://doi.org/10.1117/12.2075790
Event: The International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference (icPOE 2014), 2014, Xi'an, China

Abstract

The monolayer SiN_x optical thin films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technology on the BK7 glass substrate, the laser-induced damage threshold was measured by laser damage testing equipment, and we also investigated the relations between processing techniques and laser-induced damage properties. The study and analysis to orthogonal experiment results show that PECVD processing techniques have an effect on the laser-induced damage properties. Among them,radio frequency has the biggest effection, temperature is the main factor, working pressure is the unimportant factor, and we also achieve the optimal processing parameters (Temperature is 350℃; RF power is 250W; Working pressure is 60Pa).

Citation Download Citation

Peng Li, Lingxia Hang, Linjun Li, and Fabin Huang "Research of the relations between monolayer SiN_x optical thin film processing techniques and laser-induced damage properties prepared by PECVD technology", Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 944919 (19 February 2015); https://doi.org/10.1117/12.2075790

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