Extended wavelength SWIR detectors with reduced dark current

Noam Cohen; Ori Aphek

doi:10.1117/12.2192103

4 June 2015 Extended wavelength SWIR detectors with reduced dark current

Noam Cohen, Ori Aphek

Proceedings Volume 9451, Infrared Technology and Applications XLI; 945106 (2015) https://doi.org/10.1117/12.2192103
Event: SPIE Defense + Security, 2015, Baltimore, MD, United States

Abstract

Most SWIR sensing applications are limited to cutoff wavelength of 1.7μm at room temperature due to the energy gap of InGaAs alloy lattice matched to InP. Nevertheless, there is an increasing demand for detectors with extended cutoff wavelength of up to 2.5μm for various applications. Due to system requirements those detector should be operated at near room temperature conditions. The high temperature operation requirement limits the use of high Indium content alloys, since those alloys are strained related to the InP substrate and exhibit high dark current and poor uniformity, or even SWIR MCT – both of which need significant cooling.

In this paper we will present some comparative methods for evaluation of extended wavelength SWIR detectors with reduced dark current, working at near room temperature. Those types of detectors can be based on lattice matched alloys consist of type II superlattice, as well as other advanced structures, expected to have better uniformity and utilized for variety of SWIR based applications.

Citation Download Citation

Noam Cohen and Ori Aphek "Extended wavelength SWIR detectors with reduced dark current", Proc. SPIE 9451, Infrared Technology and Applications XLI, 945106 (4 June 2015); https://doi.org/10.1117/12.2192103

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