Paper
12 May 2015 Test pixels for high-temperature infrared scene projection
Christopher J. Fredricksen, Seth Calhoun, Stephen Trewick, Aubrey Coffey, Edward Dein, Kevin R. Coffey, Robert E. Peale, Joseph D. LaVeigne, Gregory Franks, Tom Danielson, John M. Lannon Jr., Scott H. Goodwin
Author Affiliations +
Abstract
High pixel temperatures for IR scene projector arrays face materials challenges of oxidation, diffusion, and recrystallization. For cost effective development of new high-temperature materials, we have designed and fabricated simplified pixels for testing. These consist of resistive elements, traces, and bond pads sandwiched between dielectric layers on Si wafers. Processing involves a pad exposure etch, a pixel outline etch, and an undercut etch to thermally isolate the resistive element from the substrate. Test pixels were successfully fabricated by electron-beam lithography using a combination of wet and dry etching.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher J. Fredricksen, Seth Calhoun, Stephen Trewick, Aubrey Coffey, Edward Dein, Kevin R. Coffey, Robert E. Peale, Joseph D. LaVeigne, Gregory Franks, Tom Danielson, John M. Lannon Jr., and Scott H. Goodwin "Test pixels for high-temperature infrared scene projection", Proc. SPIE 9452, Infrared Imaging Systems: Design, Analysis, Modeling, and Testing XXVI, 94520X (12 May 2015); https://doi.org/10.1117/12.2177025
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Resistance

Infrared radiation

Silicon

Dielectrics

Metals

Dry etching

Back to Top