Indium Doped Silicon Detector Arrays For Space Application

K. Ho fmann; P. Nothaft

doi:10.1117/12.948312

7 December 1988 Indium Doped Silicon Detector Arrays For Space Application

K. Ho fmann, P. Nothaft

Proceedings Volume 0972, Infrared Technology XIV; (1988) https://doi.org/10.1117/12.948312
Event: 32nd Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1988, San Diego, CA, United States

Abstract

Indium doped silicon (Si:In) material has been used to fabricate the detector elements for an infrared (IR) radiometer array. The array will be employed in experiments on a spaceborne platform, where a low radiation background (fiDg < 109 cm^-2sec^-1) and a low operating temperature (T < 20 K) is provided. The performance of the Si:In detectors has been characterized prior to the assembly of the array. Test results will be presented for the spectral responsivity, the linearity, the frequency behaviour, the noise equivalent power values and the cross talk.

Citation Download Citation

K. Ho fmann and P. Nothaft "Indium Doped Silicon Detector Arrays For Space Application", Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); https://doi.org/10.1117/12.948312

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available