Photolithography reaches 6 nm half-pitch using EUV light

Daniel Fan; Yasin Ekinci

doi:10.1117/12.2219737

18 March 2016 Photolithography reaches 6 nm half-pitch using EUV light

Daniel Fan, Yasin Ekinci

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97761V (2016) https://doi.org/10.1117/12.2219737
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

EUV interference lithography records the interference pattern of two diffracted, coherent light beams, where the pattern resolution is half the diffraction grating resolution. The fabrication of diffraction grating masks by e-beam lithography is restricted by the electron proximity effect and pattern transfer limitations into diffraction efficient materials. By patterning HSQ lines at a relaxed pitch to avoid the electron proximity effect, depositing conformal iridium via atomic layer deposition, followed by ion milling the top and bottom iridium and HSQ removal, we fabricated iridium diffraction gratings at double the line spacing of the original HSQ lines. 6 nm half-pitch patterns were achieved using these masks marking a new record resolution in photolithography.

Citation Download Citation

Daniel Fan and Yasin Ekinci "Photolithography reaches 6 nm half-pitch using EUV light", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761V (18 March 2016); https://doi.org/10.1117/12.2219737

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