10 July 2012 Frequency multiplication of lamellar phase block copolymers with grapho-epitaxy directed self-assembly sensitivity to prepattern
Author Affiliations +
Abstract
The optimization of a grapho-epitaxy process flow for lamellar phase block copolymer frequency multiplication on full 300 mm wafers is discussed. The process uses a dedicated photoresist that, after hardening, allows direct coating and annealing of the block copolymer over it. Some of the critical parameters for optimization of this process were found to be the selection of the neutral layer material and reduction of the prepattern resist height. Process window analysis was done by determining the best dose and focus settings for generating high quality directed self-assembly structures with the prepattern process. A very small process window for good self-assembly and an offset in the optimum dose and focus settings for these two stages of the process were found. Finally, the sensitivity of the process to programmed prepattern imperfections was studied. Programmed protrusions in the prepattern as small as 6 nm were found to cause self-assembly defects.
© 2012 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2012/$25.00 © 2012 SPIE
Roel Gronheid, Paulina A. Rincon Delgadillo, Ivan Pollentier, Paul F. Nealey, Todd R. Younkin, Mark H. Somervell, Joshua S. Hooge, and Kathleen Nafus "Frequency multiplication of lamellar phase block copolymers with grapho-epitaxy directed self-assembly sensitivity to prepattern," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(3), 031303 (10 July 2012). https://doi.org/10.1117/1.JMM.11.3.031303
Published: 10 July 2012
Lens.org Logo
CITATIONS
Cited by 19 scholarly publications and 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Directed self assembly

Scanning electron microscopy

Optical lithography

Semiconducting wafers

Image processing

Reticles

Coating

RELATED CONTENT

Microlens-induced pattern defect in DUV resist
Proceedings of SPIE (May 14 2004)
Reduction of internal stress in a SU 8 like negative...
Proceedings of SPIE (August 24 2001)
Optimized Tri-Layer Resist Technique For Volume Production
Proceedings of SPIE (August 25 1987)
Impact of mask errors on full chip error budgets
Proceedings of SPIE (July 26 1999)
A Submicron Lithography Process Using Philips I-Line Stepper
Proceedings of SPIE (January 01 1988)
A Review Of Contrast In Positive Photoresists
Proceedings of SPIE (April 18 1985)

Back to Top