Investigation of factors affecting backside hotspot localization in infrared lock-in thermography

Nicholas Chiu Yen Koh; Kok Swee Sim; Tiong Min Hoe

doi:10.1117/1.JMM.14.3.035501

3 September 2015 Investigation of factors affecting backside hotspot localization in infrared lock-in thermography

Nicholas Chiu Yen Koh, Kok Swee Sim, Tiong Min Hoe

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 3, 035501 (September 2015). https://doi.org/10.1117/1.JMM.14.3.035501

Abstract

Infrared lock-in thermography (IR-LIT) is a fault localization technique that serves the purpose of detecting a local heat source or hotspot emitted by the faulty area. Performing backside hotspot localization overcomes the limitation during frontside hotspot localization, especially for shorted areas that emit a low heat source. In order to produce better hotspot localization from the package backside, it is important to study more of the factors affecting backside hotspot localization, including the power settings of the device, the lock-in frequency, and the die thickness of the packages. Power packages are inspected using a tool with varying power and frequency settings. The results are collected by observing the size of the hotspot and by recording the time taken for the hotspot to appear. To investigate the die thickness, the die surface is grinded from the backside of the die and the thickness of the die was measured using x-rays. The relationship between the power settings, the frequency settings, and the die thickness does show significant changes to the hotspot size and the time taken to generate a hotspot.

Citation Download Citation

Nicholas Chiu Yen Koh, Kok Swee Sim, and Tiong Min Hoe "Investigation of factors affecting backside hotspot localization in infrared lock-in thermography," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 035501 (3 September 2015). https://doi.org/10.1117/1.JMM.14.3.035501

Published: 3 September 2015

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