Through-thickness mark length variations in laser-irradiated thin films

Brian Josef Bartholomeusz; George R. Olin

doi:10.1117/12.55665

1 August 1990 Through-thickness mark length variations in laser-irradiated thin films

Brian Josef Bartholomeusz, George R. Olin

Author Affiliations +

Optical Engineering, Vol. 29, Issue 8, (August 1990). https://doi.org/10.1117/12.55665

Abstract

Low-conductivity, laser-irradiated thin films such as the chalcogenides employed for optical data storage can display manifestations of significant through-thickness thermal gradients. A combined Laplacetra nsform, Fou rier-i nteg ral method was used to derive the tern peratu re distributions in such films, and the results were used to examine the effects of some marking parameters on through-thickness thermal gradients. The results were in good qualitative agreement with experimental observations.

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Brian Josef Bartholomeusz and George R. Olin "Through-thickness mark length variations in laser-irradiated thin films," Optical Engineering 29(8), (1 August 1990). https://doi.org/10.1117/12.55665

Published: 1 August 1990

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