Metal-oxide thin films with reduced residual absorption deposited in a reactive low-voltage ion-plating process with N2 activation

Sohrab Zarrabian; Austin Grogan; X. Q. Hu; C. Lee; Karl H. Guenther

doi:10.1117/12.60847

1 March 1993 Metal-oxide thin films with reduced residual absorption deposited in a reactive low-voltage ion-plating process with N2 activation

Sohrab Zarrabian, Austin Grogan, X. Q. Hu, C. Lee, Karl H. Guenther

Author Affiliations +

Optical Engineering, Vol. 32, Issue 3, (March 1993). https://doi.org/10.1117/12.60847

Abstract

Mechanisms have been investigated for increasing the abundance of atomic oxygen in the process environment during reactive low-voltage ion plating, a plasma-assisted evaporation process. Feeding several percent of nitrogen into the coating chamber led to enhanced oxidation and consequential reduction of residual optical absorption of ion-plated oxide films of tantala.

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Sohrab Zarrabian, Austin Grogan, X. Q. Hu, C. Lee, and Karl H. Guenther "Metal-oxide thin films with reduced residual absorption deposited in a reactive low-voltage ion-plating process with N2 activation," Optical Engineering 32(3), (1 March 1993). https://doi.org/10.1117/12.60847

Published: 1 March 1993

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