Liquid-crystal 1.8-in. displays using poly-Si thin-film transistors with novel structure and a storage-capacitance arrangement

Takashi Sugawara; Kazuhiro Kobayashi; Hiroyuki Murai; Christiaan Baert; Takao Sakamoto; Hidetada Tokioka; Yuichi Masutani; Hirofumi Namizaki; Masahiro Nunoshita

doi:10.1117/12.181150

1 November 1994 Liquid-crystal 1.8-in. displays using poly-Si thin-film transistors with novel structure and a storage-capacitance arrangement

Takashi Sugawara, Kazuhiro Kobayashi, Hiroyuki Murai, Christiaan Baert, Takao Sakamoto, Hidetada Tokioka, Yuichi Masutani, Hirofumi Namizaki, Masahiro Nunoshita

Author Affiliations +

Optical Engineering, Vol. 33, Issue 11, (November 1994). https://doi.org/10.1117/12.181150

Abstract

We have fabricated 1.8-in., 86,400-pixel poly-Si thin-film-transistor (TFT) LCDs with a novel TFT structure and a storage-capacitance (C_st) arrangement. The TFTs have a self-aligned offset structure that is made by a simple process without using an additional mask. With this structure, we have reduced the OFF current, and hence attained a high ON/OFF current ratio of 10⁷. A novel C_st line arrangement called "modified on C_st gate" was adopted. Gate lines and C_st lines are arranged alternately, and the (n - 1)'th C_st line is connected to the n'th gate line at the line's end. The C_st line works as backup for the gate line. Consequently, we have obtained TFT arrays with no line defects (240 gate lines). By using these techniques, we have succeeded in fabricating a high-performance 1.8-in. poly-Si TFT-LCD panel for a projection TV.

Citation Download Citation

Takashi Sugawara, Kazuhiro Kobayashi, Hiroyuki Murai, Christiaan Baert, Takao Sakamoto, Hidetada Tokioka, Yuichi Masutani, Hirofumi Namizaki, and Masahiro Nunoshita "Liquid-crystal 1.8-in. displays using poly-Si thin-film transistors with novel structure and a storage-capacitance arrangement," Optical Engineering 33(11), (1 November 1994). https://doi.org/10.1117/12.181150

Published: 1 November 1994

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