SLITS simulator: modeling and simulation of e-beam/deep-ultraviolet exposure and silylation

Declan McDonagh; Khalil I. Arshak; Arousian Arshak; Jules Braddell

doi:10.1117/1.600931

1 January 1996 SLITS simulator: modeling and simulation of e-beam/deep-ultraviolet exposure and silylation

Declan McDonagh, Khalil I. Arshak, Arousian Arshak, Jules Braddell

Optical Engineering, Vol. 35, Issue 1, (January 1996). https://doi.org/10.1117/1.600931

The positive resist image by dry etching (PRIME) process is a high-resolution positive resist system incorporating deep-UV (DUV)/ebeam exposure, silylation (gas/liquid phase), and dry development. A new method to calculate the silylation profile in the PRIME process is presented. New software modules have been added to the 2-D simulator SLITS (simulation of lithography on topographic substrates) to simulate the silylation and dry-developed profiles in the PRIME process. The siIylation and dry-developed profiles for the PRIME process are simulated and compared to experimental results. Simulations were carried out for both e-beam and DUV exposures. Under e-beam exposure, the maximum percentage error between the simulated and experimental results was 13%. Under DUV exposure, the silylation depth at the mask edge can be reduced by increasing the dose thus effectively controlling the resist linewidth.

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Declan McDonagh, Khalil I. Arshak, Arousian Arshak, and Jules Braddell "SLITS simulator: modeling and simulation of e-beam/deep-ultraviolet exposure and silylation," Optical Engineering 35(1), (1 January 1996). https://doi.org/10.1117/1.600931

Published: 1 January 1996

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