Photoacoustic investigation of intrinsic and extrinsic Si

Sajan D. George; B. Aneesh Kumar; Periasamy Radhakrishnan; V. P.N. Nampoori; C. P. Girija Vallabhan

doi:10.1117/1.1814357

1 December 2004 Photoacoustic investigation of intrinsic and extrinsic Si

Sajan D. George, B. Aneesh Kumar, Periasamy Radhakrishnan, V. P.N. Nampoori, C. P. Girija Vallabhan

Author Affiliations +

Optical Engineering, Vol. 43, Issue 12, (December 2004). https://doi.org/10.1117/1.1814357

Abstract

An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.

©(2004) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Sajan D. George, B. Aneesh Kumar, Periasamy Radhakrishnan, V. P.N. Nampoori, and C. P. Girija Vallabhan "Photoacoustic investigation of intrinsic and extrinsic Si," Optical Engineering 43(12), (1 December 2004). https://doi.org/10.1117/1.1814357

Published: 1 December 2004

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