Prof. Anthony Krier Profile

Prof. Anthony Krier

Professor at Lancaster Univ

SPIE Involvement:

Author

Publications (17)

Proceedings Article | 22 August 2020 Presentation + Paper

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Peter Carrington, Evangelia Delli, Veronica Letka, Matt Bentley, Peter Hodgson, Eva Repiso, Jonathan Hayton, Adam Craig, Qi Lu, Richard Beanland, Anthony Krier, Andrew R. Marshall

Proceedings Volume 11503, 115030G (2020) https://doi.org/10.1117/12.2568741

KEYWORDS: Superlattices, Silicon, Sensors, Gallium antimonide, Antimony, Photodetectors, Indium arsenide, Absorption

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Proceedings Article | 26 February 2020 Presentation + Paper

Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates

Qi Lu, Yi Zhou, Jianxin Chen, Li He, Anthony Krier

Proceedings Volume 11284, 1128415 (2020) https://doi.org/10.1117/12.2544811

KEYWORDS: Light emitting diodes, Mid-IR, Indium arsenide, Superlattices, Quantum wells, Arsenic, Molecular beam epitaxy

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Proceedings Article | 23 September 2016 Presentation + Paper

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

P. Carrington, D. Montesdeoca, H. Fujita, J. James, M. Wagener, J. Botha, A. R. Marshall, A. Krier

Proceedings Volume 9937, 993708 (2016) https://doi.org/10.1117/12.2236957

KEYWORDS: Solar cells, Gallium antimonide, Gallium arsenide, Photons, Absorption, Sun, External quantum efficiency, Quantum efficiency, Luminescence, Antimony

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Proceedings Article | 16 September 2016 Presentation + Paper

InSb-based quantum dot nanostructures for mid-infrared photonic devices

P. Carrington, E. Repiso, Q. Lu, H. Fujita, A. R. J. Marshall, Q. Zhuang, A. Krier

Proceedings Volume 9919, 99190C (2016) https://doi.org/10.1117/12.2236869

KEYWORDS: Quantum dots, Mid-IR, Light emitting diodes, Quantum wells, Nanostructures, Photonic devices, Indium arsenide, Electroluminescence, Gallium antimonide, Electrons

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Proceedings Article | 4 February 2013 Paper

InAs-based dilute nitride materials and devices for the mid-infrared spectral range

A. Krier, M. de la Mare, Q. Zhuang, P. Carrington, A. Patane

Proceedings Volume 8631, 86311Q (2013) https://doi.org/10.1117/12.2008800

KEYWORDS: Quantum wells, Indium arsenide, Nitrogen, Mid-IR, Electroluminescence, Gallium arsenide, Antimony, Chromium, Luminescence, Light emitting diodes

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Proceedings Article | 24 January 2011 Paper

MBE growth and characterization of dilute nitrides for mid-infrared optoelectronic devices

M. de la Mare, A. Krier, Q. Zhuang, P. Carrington, A. Patane

Proceedings Volume 7945, 79450L (2011) https://doi.org/10.1117/12.872759

KEYWORDS: Indium arsenide, Nitrogen, Gallium arsenide, Quantum wells, Mid-IR, Luminescence, Plasma, Optoelectronic devices, Crystals, Temperature metrology

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Proceedings Article | 24 September 2009 Paper

Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range

M. de la Mare, Q. Zhuang, A. Patanè, S. Dhar, A. Krier

Proceedings Volume 7474, 747422 (2009) https://doi.org/10.1117/12.829354

KEYWORDS: Gallium arsenide, Indium arsenide, Nitrogen, Mid-IR, Luminescence, Semiconductors, Plasma, Molecular beam epitaxy, Statistical modeling, Temperature metrology

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Proceedings Article | 1 February 2008 Paper

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes

P. Carrington, V. Solov'ev, Q. Zhuang, S. Ivanov, A. Krier

Proceedings Volume 6900, 69000I (2008) https://doi.org/10.1117/12.755465

KEYWORDS: Indium arsenide, Light emitting diodes, Antimony, Electroluminescence, Mid-IR, Quantum dots, Temperature metrology, Luminescence, Quantum cascade lasers, Molecular beam epitaxy

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Proceedings Article | 10 October 2007 Paper

Mid-infrared InAsSbP/InAsSb quantum well laser diodes

Min Yin, Anthony Krier

Proceedings Volume 6738, 673808 (2007) https://doi.org/10.1117/12.737805

KEYWORDS: Antimony, Quantum wells, Indium arsenide, Laser damage threshold, Semiconductor lasers, Mid-IR, Waveguides, Cladding, Heterojunctions, Refractive index

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Proceedings Article | 3 February 2007 Paper

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

V. Smirnov, P. Batty, A. Krier, R. Jones, V. Vasil'ev, G. Gagis, V. Kuchinskii

Proceedings Volume 6479, 647918 (2007) https://doi.org/10.1117/12.721327

KEYWORDS: Gallium antimonide, Light emitting diodes, Liquid phase epitaxy, Mid-IR, Electroluminescence, Indium arsenide, Antimony, Gallium, Heterojunctions, Crystals

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Proceedings Article | 13 October 2006 Paper

Mid-infrared diode lasers for free-space optical communications

M. Yin, A. Krier, S. Krier, R. Jones, P. Carrington

Proceedings Volume 6399, 63990C (2006) https://doi.org/10.1117/12.688238

KEYWORDS: Indium arsenide, Antimony, Cladding, Semiconductor lasers, Liquid phase epitaxy, Temperature metrology, Pulsed laser operation, Mid-IR, Free space optical communications, Laser damage threshold

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Proceedings Article | 5 October 2006 Paper

Development of 3.7μm InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy

M. Yin, A. Krier, R. Jones, S. Krier, D. Campbell

Proceedings Volume 6397, 639707 (2006) https://doi.org/10.1117/12.688254

KEYWORDS: Quantum wells, Antimony, Indium arsenide, Liquid phase epitaxy, Semiconductor lasers, Indium arsenide antimonide phosphide, Cladding, Scanning electron microscopy, Light emitting diodes, Electroluminescence

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Proceedings Article | 22 October 2004 Paper

Fundamental physics and practical realization of mid-infrared photodetectors

Anthony Krier, Parthasarathi Chakrabarti, Honghai Gao, Y. Mao, Xing-Liang Huang, Victor Sherstnev

Proceedings Volume 5564, (2004) https://doi.org/10.1117/12.555684

KEYWORDS: Photodiodes, Sensors, Photodetectors, Indium arsenide, Heterojunctions, Diffusion, Doping, Mid-IR, Absorption, Cladding

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SPIE Journal Paper | 1 September 2003

Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results

P. Chakrabarti, Anthony Krier, A. Morgan

OE, Vol. 42, Issue 09, (September 2003) https://doi.org/10.1117/12.10.1117/1.1595668

KEYWORDS: Antimony, Photodetectors, Indium arsenide, Sensors, Doping, Heterojunctions, Diffusion, Cladding, Absorption, Quantum efficiency

Proceedings Article | 11 June 2003 Paper

Interface luminescence and lassing at a type II single broken-gap heterojunction

Konstantin Moiseev, Maya Mikhailova, Yury Yakovlev, Anthony Krier

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514303

KEYWORDS: Heterojunctions, Electroluminescence, Luminescence, Quantum efficiency, Fermium, Interfaces, Laser development, Physics, Indium arsenide, Semiconductor lasers

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Proceedings Article | 12 June 2002 Paper

Electroluminescence from InAsSb quantum dot light-emitting diodes grown by liquid phase epitaxy

Anthony Krier, Xing-Ling Huang

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470576

KEYWORDS: Electroluminescence, Quantum dots, Indium arsenide, Light emitting diodes, Liquid phase epitaxy, Antimony, Phonons, Atomic force microscopy, Quantum wells, Temperature metrology

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Proceedings Article | 22 May 2002 Paper

Type-II diode lasers based on interface recombination at 3.3um

Anthony Krier, Derek Wright, Victoria Ellarby, Victor Sherstnev, Konstantin Moiseev, Yury Yakovlev

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467947

KEYWORDS: Heterojunctions, Interfaces, Indium arsenide, Semiconductor lasers, Electroluminescence, Liquid phase epitaxy, Mid-IR, Luminescence, Antimony, Quantum wells

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Showing 5 of 17 publications

Conference Committee Involvement (1)

Infrared Optoelectronics: Materials and Devices

4 September 2012 | Evanston, Illinois, United States

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