Mr. Chentao Cao Profile

Chentao Cao

at 13th Research Institute of CETC

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Proceedings Article | 12 April 2023 Paper

Investigation of InGaAs/InAlAs superlattices for quantum cascade laser structures grown by MOCVD

Chentao Cao, Bingqi Chen, Hongtai Chen, Yulong Fang

Proceedings Volume 12565, 125652L (2023) https://doi.org/10.1117/12.2662696

KEYWORDS: Quantum cascade lasers, Superlattices, Metalorganic chemical vapor deposition, Indium gallium arsenide, Interfaces, Temperature metrology, Crystals, Transmission electron microscopy, Semiconductor lasers, Scanning electron microscopy

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InP-based lattice-matched and strain-compensated InGaAs/InAlAs superlattices of quantum cascade laser (QCL) structures were grown by metal-organic chemical vapour deposition (MOCVD). In this work, a very slow growth rate of ~0.1nm/s was used for the epitaxy of InGaAs/InAlAs superlattice (SL) structures, which allows fine control over layer thickness. Changing the interruption time (1.5s, 3s, 6s) between each layer of the SL structure showed little difference compared with the one with no interruption delay during the growth. Different from the lattice-matched InGaAs/InAlAs SL structure, the results showed that growth temperature played an important role in improving crystal quality and surface morphology for the strain-compensated SL structure. By reducing the growth temperature (from 680 °C to 640 °C at intervals of 20 °C) the defects density of the strain-compensated SLs gradually decreased, until the temperature fell below a certain value (620 °C) the overall quality started to degrade. The optimized growth parameters led to a near defect-free epi-wafer for the strain-compensated SL structure, which was very close to the ones of latticed-matched SL structure. The high-resolution transmission electron microscope (HRTEM) images indicated an absence of dislocations and good material quality and uniformity for the strain-compensated InGaAs/InAlAs layers, the interfaces were clear and straight. The high resolution X-ray diffraction (HRXRD) was employed for the measurement of composition and growth rate of SL layers.

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