The higher numerical aperture ArF scanning exposure tool was developed with completely new platform for further 100nm technology node. This new tool is designed and manufactured with wave front aberration controlled projection lens by using new phase measurement interferometer system, enhanced illuminator structure technology to optimize many various conditions in device production, higher power light source ArF excimer laser and higher speed stages in order to achieve enough required productivity of devices in this node. Not only for the run rate but for the finer accuracy in stage systems and focus control system were involved in this new platform. The actual imaging and accuracy performance will be shown and discussed.
The 193nm lithography is needed for manufacturing devices of finer than 180nm feature size rule. The each key technology in regard to 193nm wavelength, the light source, glass material, photo resist, mask, and so on, has been investigated until now. For ArF exposure too, the major concerns of 193nm wavelength are the projection unit and the illumination unit. The glass materials have been tested the quality and durability for exposure tools' life. Using enough good materials, the first solution of full field ArF projection lens was accomplished by all refractive type, and its performance was confirmed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.