How does a bulk GaN crystal grow?

Tomasz Sochacki

doi:10.1117/12.2607701

5 March 2022 How does a bulk GaN crystal grow?

Tomasz Sochacki

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC1200101 (2022) https://doi.org/10.1117/12.2607701
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Gallium nitride substrates are needed for advanced electronic and optoelectronic devices based on GaN-on-GaN technology. The wafers can be prepared from crystals grown by three main methods: crystallization from gas phase, basic or acidic ammonothermal process or growth from solution of gallium and sodium. In this paper a detailed investigation of the basic ammonothermal growth process is presented. By analyzing the crystallization process on a native seed of a lenticular shape we wanted to answer some basic questions: i/ which crystallographic planes play the most important role (which are formed and which disappear)?; ii/ what is the relation between the growth rates in different crystallographic directions?; iii/ what is the influence of the off-cut of the seed on the growth process?.

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Tomasz Sochacki "How does a bulk GaN crystal grow?", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200101 (5 March 2022); https://doi.org/10.1117/12.2607701

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