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11 November 2022 Defect risks in chemically amplified resists used for extreme ultraviolet lithography
Takahiro Kozawa
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Proceedings Volume PC12292, International Conference on Extreme Ultraviolet Lithography 2022; PC1229205 (2022) https://doi.org/10.1117/12.2643012
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States
Abstract
In lithography, resist patterns are fabricated through chemical reactions induced by radiation. In the highly resolving lithography such as extreme ultraviolet (EUV) lithography, the stochastically generated defects, called stochastic defects, are a serious concern. In this study, the variation of resist polymer caused by stochastic effects was investigated, assuming line-and-space patterns to assess the defect risks. Using a half pitch, a sensitivity, a thermalization distance, a total sensitizer concentration, and a standard deviation of the number of protected units per polymer molecule as variables, the resist pattern formation was simulated on the basis of the sensitization and reaction mechanisms. The risks of stochastic pinching and bridging were clarified from the viewpoint of the variation of resist polymer in terms of the relationships to a half pitch, a sensitivity, a thermalization distance, a total sensitizer concentration, and a standard deviation.
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Takahiro Kozawa "Defect risks in chemically amplified resists used for extreme ultraviolet lithography", Proc. SPIE PC12292, International Conference on Extreme Ultraviolet Lithography 2022, PC1229205 (11 November 2022); https://doi.org/10.1117/12.2643012
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KEYWORDS
Polymers
Molecules
Chemically amplified resists
Extreme ultraviolet lithography
Electrons
Lithography
Stochastic processes
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