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Electric field induced second harmonic generation (EFISHG) techniques accurately map the electric field in the channel of a thin film transistor and provide insights into mobile charge distribution as well as interface and bulk trapped charge distribution in the semiconductor and dielectric layers. Since the method is sensitive to both mobile and trapped charges, it is valuable for monitoring carrier dynamics in organic field-effect transistors (FETs). Time-resolved EFISHG images from organic FETs yield real-time motion of the carrier dynamics, providing an alternate estimate of contact-free and trap-free carrier mobility.
Suchismita Guha
"Nonlinear optical imaging of carrier transport at the semiconductor-insulator interface in organic field effect transistors", Proc. SPIE PC12662, Organic and Hybrid Transistors XXII, PC126620N (29 September 2023); https://doi.org/10.1117/12.2680840
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Suchismita Guha, "Nonlinear optical imaging of carrier transport at the semiconductor-insulator interface in organic field effect transistors," Proc. SPIE PC12662, Organic and Hybrid Transistors XXII, PC126620N (29 September 2023); https://doi.org/10.1117/12.2680840