Paper
30 April 1981 Characteristics Of Polarized Light Reflection From The Si02-Si Film-Substrate System
R. M. A. Azzam, A.-R. M. Zaghloul
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Abstract
The change of polarization of light upon reflection from an optically isotropic film-substrate system is determined by the ratio of complex amplitude p and s reflection coeffi-cients, p = Rp/Rs. If the incident light is linearly polarized at 45 degree azimuth from the plane of incidene, p assumes the dual role of representing the elliptic vibration of the reflected light. We examine p as a function of angle of incidence φ and film thickness d for the SiO2-Si system at wavelength λ = 6328 Å and present contours of φ = constant and d = constant in the complex p plane. Conversely, we also determine contours in the φ plane that represent ψ = arctan Ipl=constant and Δ=arg p=constant. Of particular interest are images in the φd plane of the real and imaginary axes (Δ=0, π and Δ=+π2) and of the unit circle(ψ=π4) of the complex p plane.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. M. A. Azzam and A.-R. M. Zaghloul "Characteristics Of Polarized Light Reflection From The Si02-Si Film-Substrate System", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931713
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KEYWORDS
Reflection

Polarization

Electrical engineering

Refractive index

Semiconductors

Silicon

Ellipsometry

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