Optical Methods For End-Point Detection In Plasma Etching

Paul J. Marcoux; Pang-Dow Foo

doi:10.1117/12.931703

30 April 1981 Optical Methods For End-Point Detection In Plasma Etching

Paul J. Marcoux, Pang-Dow Foo

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931703
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

Plasma etching has become an important technology in the fabrication of integrated circuits. The importance of this technology will increase as the minimum geometry features continue to decrease to the submicron region. Process monitoring is a very desirable feature in maintaining the precise control that is required of plasma etching for VLSI circuits. This paper describes two optical methods of process monitoring and end point detection for plasma etching. Examples are presented for emission spectroscopy, and an optical reflection method. A direct comparison of these methods as end point detection monitors is also made.

Citation Download Citation

Paul J. Marcoux and Pang-Dow Foo "Optical Methods For End-Point Detection In Plasma Etching", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931703

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