Fabrication Of Integral Solar Cell Covers By A Plasma-Activated Source

Harold S. Gurev

doi:10.1117/12.933296

29 April 1982 Fabrication Of Integral Solar Cell Covers By A Plasma-Activated Source

Harold S. Gurev

Proceedings Volume 0325, Optical Thin Films; (1982) https://doi.org/10.1117/12.933296
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

A novel plasma-activated CVD process has been employed to deposit SiO2 and mixed oxide (SiO2+ Al2O3) covers directly on silicon solar cells. SiO2 covers as thick as 130μm were deposited near 20μm per hour at substrate temperatures below 150°C. Deposition stresses and cell fracture become serious problems above 60μm thickness.

Citation Download Citation

Harold S. Gurev "Fabrication Of Integral Solar Cell Covers By A Plasma-Activated Source", Proc. SPIE 0325, Optical Thin Films, (29 April 1982); https://doi.org/10.1117/12.933296

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