InGaAsP Buried Crescent Lasers With Separate Optical Confinement

R. A. Logan; J. P. van der Ziel; H. Temkin

doi:10.1117/12.934762

7 November 1983 InGaAsP Buried Crescent Lasers With Separate Optical Confinement

R. A. Logan, J. P. van der Ziel, H. Temkin

Proceedings Volume 0380, Los Alamos Conf on Optics '83; (1983) https://doi.org/10.1117/12.934762
Event: Los Alamos Conference on Optics, 1983, New Mexico, United States

Abstract

InGaAsP/InP buried crescent lasers with separate optical confinement can be grown to emit at any wavelength from ~ 1 pm to 1.68 μm by adjusting only the quaternary compositions, with other growth or processing steps unchanged. The addition of the separate optical confine-ment waveguides on each side of the active layer yields (a) higher optical power (b) improved optical linearity (c) higher external quantum efficiency (d) improved beam quality and (e) higher device yield. The reproducibility of growth is further demonstrated by forming arrays of 5 lasers on 8 pm centers which operate in lowest order transverse mode up to 50 mW per facet and have thresholds as low as 60 mÅ with external quantum efficiencies 55%.

Citation Download Citation

R. A. Logan, J. P. van der Ziel, and H. Temkin "InGaAsP Buried Crescent Lasers With Separate Optical Confinement", Proc. SPIE 0380, Los Alamos Conf on Optics '83, (7 November 1983); https://doi.org/10.1117/12.934762

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