Heterojunction Stripe Geometry Lead Salt Diode Lasers Grown By Molecular Beam Epitaxy

Dale L. Partin

doi:10.1117/12.937421

26 November 1983 Heterojunction Stripe Geometry Lead Salt Diode Lasers Grown By Molecular Beam Epitaxy

Dale L. Partin

Proceedings Volume 0438, Tunable Diode Laser Development and Spectroscopy Applications; (1983) https://doi.org/10.1117/12.937421
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Lead-rare earth-chalcogenide diode lasers have been grown by molecular beam epitaxy. Emission wavelengths shorter than 5-6 μm have been obtained from lead-europium-selenide-telluride (pb1-xEuxSe yTe1-y) double heterojunction diode lasers grown lattice-matched to PbTe substrates. Mesa diodes with :65 μm wide tripes have been fabricated which have a wide range of single longitudinal mode emission at up to ,r1 mW/facet output power. These diodes have operated at up to 147 K CW, which is the highest CW operating temperature ever achieved with lead-chalcogenide diode lasers to our knowledge. The wavelength coverage of the PbTe system has so far been extended to 4.06 μm CW. Longer wavelength coverage is obtained from double heterojunction diode lasers with Pb1-ySnyTe active regions lattice-matched to (Pbi1-ySny)1-xYbxTe confinement layers. In preliminary studies of diode wYth x = 0.034, y = 0.14, the CW emission wavelength varied from 10.7 μm (at 10 K) to 7.1 μm (at 128 K).

Citation Download Citation

Dale L. Partin "Heterojunction Stripe Geometry Lead Salt Diode Lasers Grown By Molecular Beam Epitaxy", Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); https://doi.org/10.1117/12.937421

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