Paper
28 November 1983 Photoluminescence Dynamics Of High Density Electron Hole Plasma In Ga.5 In.5 P Under High Power Picosecond Laser Pulse Excitation
H. Zarrabi, R. R. Alfano
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Abstract
Time resolved kinetics of Ga.5 In.5 P was measured by a streak camera system. The emission recombination time was measured to be 40 ps at room temperature and 70 ps at T=78K. As excitation power density increased the band to band photoluminescence spectra at room temperature broadens, shifts to higher energy and at highest excitation power the emission spectra exhibits an overlapping of two peaks. At T=78K when excitation power density increased there appears to be another peak at the high energy side of the spectrum. The low energy band does not shift with excitation power while the high energy peak grows in intensity. We attributed these two bands to the recombination of electrons with holes in heavy and split off valence band.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Zarrabi and R. R. Alfano "Photoluminescence Dynamics Of High Density Electron Hole Plasma In Ga.5 In.5 P Under High Power Picosecond Laser Pulse Excitation", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966068
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KEYWORDS
Picosecond phenomena

Luminescence

Plasma

Electron holes

Medium wave

Gallium

Streak cameras

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