Planar Monolithic Fiber Optic Receiver Chip On A Gaas Semi-Insulating Substrate

R. M Kolbas; J K Carney; M D. Longerbone; E L. Kalweit; S T. Reimer

doi:10.1117/12.941563

10 May 1984 Planar Monolithic Fiber Optic Receiver Chip On A Gaas Semi-Insulating Substrate

R. M Kolbas, J K Carney, M D. Longerbone, E L. Kalweit, S T. Reimer

Proceedings Volume 0466, Optical Interfaces for Digital Circuits & Systems; (1984) https://doi.org/10.1117/12.941563
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The fabrication and performance of a monolihtic optical receiver chip consisting of a pin photodiode and a transimpedance preamplifier on a GaAs semi-insulating substrate is reported. The epitaxial layers for the photodiode are grown by hydride vapor phase epitaxy and the circuit elements are fabricated by selective ion implantation in the semi-insulating substrate. The integration scheme results in a planar surface which simplifies the processing of optoelectronic integrated chips.

Citation Download Citation

R. M Kolbas, J K Carney, M D. Longerbone, E L. Kalweit, and S T. Reimer "Planar Monolithic Fiber Optic Receiver Chip On A Gaas Semi-Insulating Substrate", Proc. SPIE 0466, Optical Interfaces for Digital Circuits & Systems, (10 May 1984); https://doi.org/10.1117/12.941563

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