A1Gaas/Gaas Radiation Hardened Photodiodes

J . J. Wiczer; C. E. Barnes; T. A. Fischer; L. R. Dawson; T. E. Zipperian

doi:10.1117/12.944929

15 October 1984 A1Gaas/Gaas Radiation Hardened Photodiodes

J . J. Wiczer, C. E. Barnes, T. A. Fischer, L. R. Dawson, T. E. Zipperian

Proceedings Volume 0506, Fiber Optics in Adverse Environments II; (1984) https://doi.org/10.1117/12.944929
Event: 28th Annual Technical Symposium, 1984, San Diego, United States

Abstract

We report on AlGaAs/GaAs double heterojunction photodiodes designed and fabricated to be resistant to the effects of ionizing-radiation. The work described here includes new results comparing optimized, AlGaAs/GaAs photodiodes grown with two different growth processes: liquid phase epitaxy and molecular beam epitaxy. These devices were processed with similar photo-lithographic masks and exposed to high energy neutrons, electrons, and photons. Electrical and optical characterizations were completed before and after each irradiation; degradation trends are reported.

Citation Download Citation

J . J. Wiczer, C. E. Barnes, T. A. Fischer, L. R. Dawson, and T. E. Zipperian "A1Gaas/Gaas Radiation Hardened Photodiodes", Proc. SPIE 0506, Fiber Optics in Adverse Environments II, (15 October 1984); https://doi.org/10.1117/12.944929

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