Paper
18 April 1985 Structure And Composition Dependence Of The Anisotropy Of The Wet Chemical Etching Of Germanium-Selenium Films
E. ONG, K. L. Tai, R. G. Vadimsky, C. T. Kemmerer, P. M. Bridenbaugh
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Abstract
A model for image formation in the Ag2Se/GexSe1-x resist systems had been proposed by Tai et al.1 The first step of the process consists of forming a thin latent image of photodoped Ag in the top layer of the GexSel-x film. This Ag doped layer then serves as a mask for the anisotropic wet chemical etching of the undoped GexSel-x structure with a bicomponent etchant. Anisotropic chemical etching results from an unusual, interlocked, phase-separated columnar structure of the GexSel-x film. The formation of such phase-separated columnar structures depends on the composition of the Germanium-Selenium film. We examine here the dependence of film microstructure on film composition and describe the relationship bewtween etching characteristics and the concentration ratios of a bicomponent developer.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. ONG, K. L. Tai, R. G. Vadimsky, C. T. Kemmerer, and P. M. Bridenbaugh "Structure And Composition Dependence Of The Anisotropy Of The Wet Chemical Etching Of Germanium-Selenium Films", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947814
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Cited by 8 scholarly publications.
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KEYWORDS
Selenium

Germanium

Etching

Wet etching

Anisotropic etching

Silver

Glasses

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