Effects Of Impurity On The IR Absorption Bands Of Si-H Centers

Du Yongchang; Zhang Yufeng; Weng Shifu

doi:10.1117/12.970897

20 December 1985 Effects Of Impurity On The IR Absorption Bands Of Si-H Centers

Du Yongchang, Zhang Yufeng, Weng Shifu

Proceedings Volume 0553, Fourier and Computerized Infrared Spectroscopy; (1985) https://doi.org/10.1117/12.970897
Event: 1985 International Conference on Fourier and Computerized Infrared Spectroscopy, 1985, Ottawa, Canada

Abstract

The IR bands in N-type and P-type floating-zone silicon grown in hydrogen atmosphere before and after neutron irradiation have been studied using FT-IR spectroscopy. The effects of impurity on the IR bands of Si-H centers have been observed.

Citation Download Citation

Du Yongchang, Zhang Yufeng, and Weng Shifu "Effects Of Impurity On The IR Absorption Bands Of Si-H Centers", Proc. SPIE 0553, Fourier and Computerized Infrared Spectroscopy, (20 December 1985); https://doi.org/10.1117/12.970897

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