Infrared Studies Of Acceptors In Gallium-Arsenide

W. J. Moore; B. V. Shanabrook

doi:10.1117/12.970886

20 December 1985 Infrared Studies Of Acceptors In Gallium-Arsenide

W. J. Moore, B. V. Shanabrook

Proceedings Volume 0553, Fourier and Computerized Infrared Spectroscopy; (1985) https://doi.org/10.1117/12.970886
Event: 1985 International Conference on Fourier and Computerized Infrared Spectroscopy, 1985, Ottawa, Canada

Abstract

The ls-2p electronic intrasite transitions and local vibrational modes (LVM) of impurities and defects in GaAs are studied in FTIR transmission spectroscopy. These features are observed in as-grown samples and in samples which have been compensated by irradiation with 2 MeV electrons. The position of the Fermi level is monitored by observing the lowest energy ls-2p transition.

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W. J. Moore and B. V. Shanabrook "Infrared Studies Of Acceptors In Gallium-Arsenide", Proc. SPIE 0553, Fourier and Computerized Infrared Spectroscopy, (20 December 1985); https://doi.org/10.1117/12.970886

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