Space Charge Limited Currents (SCLC) In Amorphous Hydrogenated Silicon (A-Si:H)

Enakshi Bhattacharya

doi:10.1117/12.940159

21 August 1987 Space Charge Limited Currents (SCLC) In Amorphous Hydrogenated Silicon (A-Si:H)

Enakshi Bhattacharya

Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940159
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

Space charge limited current measurement has emerged as a simple dependable spectroscopy to study the gap states in a-Si:H. In this paper we discuss this measurement along with its sensitivity, advantages and disadvantages.

Citation Download Citation

Enakshi Bhattacharya "Space Charge Limited Currents (SCLC) In Amorphous Hydrogenated Silicon (A-Si:H)", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940159

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available