Submicron Device Physics For Numerical Simulations

Herbert S. Bennett

doi:10.1117/12.940169

21 August 1987 Submicron Device Physics For Numerical Simulations

Herbert S. Bennett

Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940169
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

Recent advances in physics for submicron, bipolar-crystalline devices suggest principles that are valid when modeling bipolar devices with noncrystalline regions such as those with polysilicon, polycrystalline silicon, and hydrogenated amorphous silicon emitters. These principles from crystalline device physics are summarized, and their implications for the noncrystalline regions of bipolar devices are given.

Citation Download Citation

Herbert S. Bennett "Submicron Device Physics For Numerical Simulations", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940169

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