Paper
1 September 1987 Deep UV Lithography: Problems And Potential
David A. Markle
Author Affiliations +
Abstract
In recent years deep UV lithography systems have generated a great deal of interest because of their potential for a greater depth-of-focus for a given resolution. Recent experimental results have shown that 0.5 micron imaging is possible with a number of different deep UV designs. However, this does not guarantee that the next generation of optical lithography systems will operate in the deep UV. Adequate resolution is only one of many criteria that will determine the most practical approach to 0.5 micron lithography. The inherent advantages of deep UV systems may be compromised by a wide variety of difficult problems, while the performance of near UV systems may he extended further than is generally expected.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David A. Markle "Deep UV Lithography: Problems And Potential", Proc. SPIE 0774, Lasers in Microlithography, (1 September 1987); https://doi.org/10.1117/12.940395
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CITATIONS
Cited by 7 scholarly publications and 1 patent.
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KEYWORDS
Deep ultraviolet

Lithography

Semiconducting wafers

Glasses

Excimer lasers

Silica

Optical lithography

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