Gain Versus Current In Semiconductor Injection Laser: A Microscopic Approach

G Chiaretti; C Vaccarino; M Milani

doi:10.1117/12.943531

2 June 1988 Gain Versus Current In Semiconductor Injection Laser: A Microscopic Approach

G Chiaretti, C Vaccarino, M Milani

Proceedings Volume 0864, Advanced Optoelectronic Technology; (1988) https://doi.org/10.1117/12.943531
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

A presentation of new theoretical results and of physical considerations will be given starting from a nonlinear model for semiconductor injection lasers. Particular attention will be devoted to the gain calculation, to the unphysical meaning of the superlinear approach commonly used for gain calculations and to the carrier lifetime dependence on the photon number.

Citation Download Citation

G Chiaretti, C Vaccarino, and M Milani "Gain Versus Current In Semiconductor Injection Laser: A Microscopic Approach", Proc. SPIE 0864, Advanced Optoelectronic Technology, (2 June 1988); https://doi.org/10.1117/12.943531

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