Laser-Induced Formation Of SiO2-Layers For Microelectronics

H. Sigmund

doi:10.1117/12.968909

16 January 1988 Laser-Induced Formation Of SiO₂-Layers For Microelectronics

H. Sigmund

Proceedings Volume 0952, Laser Technologies in Industry; (1988) https://doi.org/10.1117/12.968909
Event: Laser Technologies in Industry, 1988, Porto, Portugal

Abstract

After a short overview about the different techniques of the Si0₂-formation by photo-induced methods used in microelectronics, the laser-induced deposition of Si0₂-layers on silicon wafers from TEOS by ArF excimer laser are depicted in more detail and the deposition conditions are outlined in dependence of substrate temperature, partial pressure and laser fluences. The physical properties of the Si0₂-layers were investigated by FT-IR spectroscopy and ellipsometry; the electrical properties of CV-characteristic, mobile ion density, interface state density and breakdown voltage are given.

Citation Download Citation

H. Sigmund "Laser-Induced Formation Of SiO₂-Layers For Microelectronics", Proc. SPIE 0952, Laser Technologies in Industry, (16 January 1988); https://doi.org/10.1117/12.968909

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