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For fine patterning, there are two possible hard mask integration schemes: quad-layer and tri-layer systems. Due to the different structures and processes between quad- and tri- layer systems, each system needs specific chemical and physical properties of the hard mask. In this paper, we report the properties of the carbon-based spin-on hard mask (CSOH) candidates for various hard mask integrations.
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Yushin Park, Seungwook Shin, Yunjun Kim, Seunghyun Kim, Jaebum Lim, Sung Hwan Kim, Hyeonil Jung, Chungheon Lee, Miyeon Han, Sanghak Lim, Jeong Yun Yu, "Investigation on spin-on hard mask integration," Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014616 (27 March 2017); https://doi.org/10.1117/12.2257846