Chemically amplified i-line positive resist for next-generation flat panel display

Hsing-Chieh Lee; Ying-Hao Lu; Shin-Yih Huang; Wei-Jen Lan; Makoto Hanabata

doi:10.1117/12.2255875

27 March 2017 Chemically amplified i-line positive resist for next-generation flat panel display

Hsing-Chieh Lee, Ying-Hao Lu, Shin-Yih Huang, Wei-Jen Lan, Makoto Hanabata

Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 101461G (2017) https://doi.org/10.1117/12.2255875
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Traditional diazonaphthoquinone (DNQ) positive photoresists are widely used for TFT-LCD array process. Current LTPS technology has more than 600ppi resolution is required for small or middle-sized TFT liquid crystal display panels. One of the ways to enhance resolution is to apply i-line single exposure system instead of traditional g/h/ibroadband exposure system. We have been developing i-line chemically amplified photoresist ECA 200 series for the next generation flat panel display (FPD). ECA 200 consists of three components: a phenol resin, a photo acid generator and dissolution enhancer. We applied two different types of dissolution enhancers with two different kinds of protected groups to our resist materials. As a result, we achieved higher sensitivity, higher resolution, less footing of the resist profile and reduced standing wave effect compared with traditional DNQ photoresists. In addition, we have found further property of photoresist that does not need post exposure bake (PEB) process. This resist has a great advantage at most of current panel plants without PEB process.

Citation Download Citation

Hsing-Chieh Lee, Ying-Hao Lu, Shin-Yih Huang, Wei-Jen Lan, and Makoto Hanabata "Chemically amplified i-line positive resist for next-generation flat panel display", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461G (27 March 2017); https://doi.org/10.1117/12.2255875

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