Control And Activation Techniques For The Optimisation Of The Reactive Sputtering Of TiO2

Kazuki Oka; Ronald P. Howson; Robert W. Lewin; Alaric G. Spencer

doi:10.1117/12.950015

27 February 1989 Control And Activation Techniques For The Optimisation Of The Reactive Sputtering Of TiO₂

Kazuki Oka, Ronald P. Howson, Robert W. Lewin, Alaric G. Spencer

Proceedings Volume 1019, Thin Film Technologies III; (1989) https://doi.org/10.1117/12.950015
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

TiO2 is a very important thin film material in optics, because the refractive index is high, and also it can satisfy the requirements of a hard, dense and chemically stable coating. In our study, the effect of the floating potential, and the resulting ion beam bombardment on the properties of TiO2 thin film deposited by reactive planar magnetron sputtering has been observed. The dense plasma of an unbalanced planar magnetron was 'leaked' onto the substrate, and controlled by permanent magnets placed behind the substrate. This allowed the floating potential to be varied from -3 up to -59V. During sputtering, this bombardment was used as a neutralised ion beam to enhance film growth. To stabilise the oxygen partial pressure, an optical emission controller was used. It gave a complete range of Ti to oxygen ratios. As a result, we obtained samples with a maximum refractive index at 633nm of 2.52 and a deposition rate of about 4X/s. The properties measured were the refractive index, the surface composition and morphology, and the crystallinity. The relationship between the refractive index and the proportions of 'anatase' and 'rutile' crystal structures of the TiO2 film was especially considered. The highest floating potential showed up to 75% 'rutile' contents.

Citation Download Citation

Kazuki Oka, Ronald P. Howson, Robert W. Lewin, and Alaric G. Spencer "Control And Activation Techniques For The Optimisation Of The Reactive Sputtering Of TiO₂", Proc. SPIE 1019, Thin Film Technologies III, (27 February 1989); https://doi.org/10.1117/12.950015

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