Paper
10 April 1989 Laser Photoablation Of Poly-Ethylcyanoacrylate And Spin-On-Glass Photoresists
J. D. Magan, M. Hogan, W. Blau, J. G. Lunney, J. G. Woods
Author Affiliations +
Proceedings Volume 1022, Laser Assisted Processing; (1989) https://doi.org/10.1117/12.950112
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
The photoablative characteristics of vapour deposited poly- ethylcyanoacrylate photoresist (PECA) and phenylsiloxane spin-on-glass (SOG) are reported. The photoablation was performed using 20 ns excimer laser pulses at 193 nm and 248 nm, and was monitored interferometrically by measuring the reflectivity of the irradiated area using a He-Ne laser. The microlithographic potential of these photoresists using photoablative etching was also investigated. Resolution of 2 μm was achieved with the SOG but there is evidence of curing by the laser pulse. Feature sizes of 3 μm were attained in PECA but this figure appears to be limited by the simple imaging system used.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. D. Magan, M. Hogan, W. Blau, J. G. Lunney, and J. G. Woods "Laser Photoablation Of Poly-Ethylcyanoacrylate And Spin-On-Glass Photoresists", Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); https://doi.org/10.1117/12.950112
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KEYWORDS
Reflectivity

Etching

Silicon

Absorption

Photoresist materials

Sodium

Laser processing

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